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| WT-3402 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 4.6 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <30 m @VGS =10V R DS(ON) <42 m @VGS =4.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R JA TJ, Tstg Value 30 Unite V V A A A W C/W C + -20 4.6 16 1.25 1.25 100 -55 to 150 Device Marking WT3402=T02 WEITRON http://www.weitron.com.tw WT-3402 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=24V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=4.6A VGS=4.5V, ID=4.0A On-State Drain Current VDS=5V, VGS=4.5A Forward Transconductance VDS=5V, ID=4.6A 30 1 1.5 2.5 + -100 1 V V nA uA m 10 rDS (on) 26 38 30 42 ID(on) gfs 5 - A S - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 782 135 93 PF Switching(3) Turn-On Delay Time V GS = 10V,V DD =15V, I D=1A, R L=15 ,RGEN=6 Rise Time V GS = 10V,V DD =15V, I D=1A, R L=15 ,RGEN=6 Turn-Off Delay Time V GS = 10V,V DD =15V, I D=1A, R L=15 ,RGEN=6 Fall Time V GS = 10V,V DD =15V, I D=1A, R L=15 ,RGEN=6 Total Gate Charge VDS=15V, ID=4.6A, VGS =10V Gate-Source Charge VDS=15V, ID=4.6A, VGS =10V Gate-Drain Charge VDS=15V, ID=4.6A, VGS =10V Drain-Source Diode Forward Voltage VGS=0V, IS=1.25A td(on) tr td(off ) tf Qg Qgs Qgd - 4.8 3.9 27.7 5.5 15.8 2 3 0.78 - nS nS nS nS nc nc nc V - 1.2 VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ _ _ 2. Pulse Test : PW < 300us, Duty Cycle < 2%. 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw WT-3402 20 VGS =4V VGS =10,9,8,7,6,5V 12 8 VGS =3V 4 0 0 ID , DRAIN CURRENT(A) ID ,DRAIN CURRENT(A) WE IT R ON 25 20 25 C 15 10 Tj =125 C 5 0 0.0 -55 C 16 2 4 6 8 10 12 0.5 1 1.5 2 2.5 3 VDS , DRAIN-TO-SOURCE VOLTAGE(V) VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1250 C ,CAPACITANCE( P F) FIG.2 Transfer Characteristics 2.2 V =10V GS I D =4.6A 1.8 1.4 1.0 0.6 0.2 0 -50 1000 750 500 250 Crss 0 0 5 10 15 20 Coss 25 30 Ciss R DS(ON) , ON-RESISTANCE() -25 0 25 50 75 100 125 Tj ( C) VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 VDS =VGS ID =250uA BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Temperature 1.3 ID =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 Vth ,NORMALIZED T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature WEITRON http://www.weitron.com.tw WT-3402 IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 20 10 24 gFS ,TRANSCONDUCTANCE(S) 20 16 12 8 4 VDS =5V 0 0 5 10 15 20 25 TJ =25 C 1 0.4 0.6 0.8 1.0 1.2 1.4 IDS ,DRAIN-SOURCE CURRENT(A) VSD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 50 ID , DRAIN CURRENT(A) 10 8 6 4 2 0 VDS =15V ID =4.6A 10 RD S (O L N) im it 10 10 0m s ms 11 DC 1s 0 2 4 6 8 10 12 14 16 0.1 VGS=10V Single Pulse TC =25 C 0.03 0.1 1 10 20 50 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge V DD FIG.10 Maximum Safe Operating Area ton toff tr 90% V IN D VG S R GE N G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms WEITRON http://www.weitron.com.tw WT-3402 WE IT R ON 10 NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 PDM t1 on 0.1 0.1 0.05 0.02 t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 1. R jA (t)=r (t) * R j A 2. R jA=See Datasheet 3. TjM-TA = PDM* R jA(t) 4. Duty Cycle, D=t1/t 2 10 100 1000 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw WT-3402 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
Price & Availability of WT-3402
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